Ion Beam Sputter Deposition (IBD, IBSD)

Materials of the target are bombarded by an ion beam, which break the target down into sputtered atoms and they are deposited and constitute a thin film on the substrate.

· Dense and pinhole free films with enhanced adhesion
· Low 10-4 torr working pressure
· Optically smooth surface
· Flat and smooth interface for Multi-layer deposition
· EUV Mirror and Damage free OLED deposition

IBSD with Ion Beam Assist

During the ion beam sputter deposition process, the other ion beam can be assisted
on the substrate, which can supply additional kinetic energy onto the ad-atoms of
the surface.
This additional energy supply could enhance the properties of the thin films and more satisfy the stoichiometry with reactive gas ion beam.
If the assist energy source can be substituted with electron beam source, IBSD with
electron beam assist.
It could obtain a different result of the thin films with crystallized, more dense and
hence transparent and conductive.

· Stoichiometry control with reactive gas ion beam
· The assist source can be substituted with electron beam source
   : Crystallized, more transparent and conductive, stress released.